Title :
GaN-based monolithic LED micro-arrays
Author :
Liu, Zhao Jun ; Wong, Ka Ming ; Tang, Chak Wah ; Lau, Kei May
Author_Institution :
Dept of Electron. & Comput. Eng., Hong Kong Univ. of Sci.&Technol., Kowloon, China
Abstract :
In this paper, the authors report an 8 times 8 active matrix light emitting diode (AMLED) array. The AMLED array is composed of 8 times 8 pixels, each of which has dimensions of 300 mum times 300 mum and a 50 mum pitch. A standard multiple quantum well (MQW) blue LED wafer grown on a sapphire substrate was used for fabrication of the LED micro array.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; sapphire; semiconductor quantum wells; substrates; wide band gap semiconductors; AMLED array; Al2O3; GaN; active matrix light emitting diode array; blue LED wafer; monolithic LED microarrays; multiple quantum well; sapphire substrate; Active matrix technology; Brightness; Circuits; Computer displays; Etching; Fabrication; Gold; Light emitting diodes; Optical arrays; Silicon compounds;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5213302
