Title :
Improved efficiency of power amplifier using CPW for K-band applications
Author :
Keshari, J.P. ; Kumar, Sandeep ; Kanaujia, Binod Kumar ; Mehra, R.M. ; Singh, Dinesh Kumar
Author_Institution :
Dept. of Electron. Eng., Sharda Univ. Greater Noida UP, Noida, India
Abstract :
This paper presents a novel design approach of CMOS power amplifier (PA) using 50Ω matched coplanar waveguide component which improves the power efficiency for K-band applications. This new technique of designing PA also enhances the data transmission rate and achieves saturated output power in the desired frequency band. A two stage CMOS PA is designed in which coplanar waveguide line is used in order to provide broadband multi-section matching networks which could improve bandwidth, output power, power gain and power added efficiency (PAE). A two-stage CMOS PA design is simulated using predictive technology model (PTM) 65nm CMOS process in ADS.v.12. A simulation result of PA achieves a reflection parameter of -43.06dB at 23GHz with forward gain of 15.6dB over the frequency band of 20.5-24.5GHz. The best achievement of design is to achieve PAE of 58% using the concept of coplanar waveguide.
Keywords :
CMOS integrated circuits; coplanar waveguide components; integrated circuit design; microwave power amplifiers; CMOS power amplifier; CPW; K-band applications; broadband multi-section matching networks; data transmission rate; efficiency 58 percent; frequency 20.5 GHz to 24.5 GHz; frequency 23 GHz; gain 15.6 dB; matched coplanar waveguide component; power added efficiency; predictive technology model; saturated output power; size 65 nm; Broadband amplifiers; CMOS integrated circuits; Coplanar waveguides; Microwave amplifiers; Power amplifiers; Power generation; CMOS; Co-planar waveguide (CPW); Power Amplifier;
Conference_Titel :
Futuristic Trends on Computational Analysis and Knowledge Management (ABLAZE), 2015 International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-8432-9
DOI :
10.1109/ABLAZE.2015.7154999