Title :
Study for safe operating area of high voltage LDMOS
Author :
Jian, Fang ; Zhaoji, Li ; Bo, Zhang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An analytical on-state breakdown model for high voltage RESURF LDMOS has been proposed in this paper. The model considers the drift velocity saturation of carriers and influence of the parasitic bipolar transistor. As a result, the electric field profile of n-drift in LDMOS, in the on-state, can be obtained. Based on this model, the safe operating area (SOA) of LDMOS can be calculated. The analytical results partially fit with our numerical (by MEDICI) and experiment results. This model is an accurate aid in understanding the device physics during the on-state, and it also directs high voltage LDMOS design.
Keywords :
power MOSFET; semiconductor device breakdown; semiconductor device models; LDMOS safe operating area; RESURF LDMOS; SOA; carrier drift velocity saturation; high voltage LDMOS; n-drift electric field profile; on-state breakdown model; on-state device physics; parasitic bipolar transistor; Analytical models; Bipolar transistors; Breakdown voltage; CMOS logic circuits; Electron mobility; Electronic mail; Impact ionization; Physics; Semiconductor device modeling; Semiconductor optical amplifiers;
Conference_Titel :
Business of Electronic Product Reliability and Liability, 2004 International Conference on
Print_ISBN :
0-7803-8361-3
DOI :
10.1109/BEPRL.2004.1308143
