DocumentCode :
3107726
Title :
IGBT tail current reduction by current injection technique
Author :
Eio, S. ; Shammas, N.Y.A.
Author_Institution :
Fac. of Comput. Eng. & Technol., Staffordshire Univ., Stafford
fYear :
2008
fDate :
1-4 Sept. 2008
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, experiments where current was injected into an IGBT (insulated gated bipolar transistor) during its turn-off transient were carried out. Results showed a significant reduction in the IGBTpsilas collector tail current which could increase the operating frequency for an application. These experiment includes a switching transient test circuit to simulate the collector tail currents, and the implementation of a current injection circuit (CIC) and a non-invasive current injection circuit (NICIC) into the experiments to reduce the collector tail current.
Keywords :
insulated gate bipolar transistors; IGBT tail current reduction; collector tail current reduction; insulated gated bipolar transistor; non-invasive current injection circuit; switching transient test circuit; turn-off transient; Bipolar transistors; Charge carrier lifetime; Circuit testing; Gold; Impurities; Insulated gate bipolar transistors; Insulation; Platinum; Tail; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Universities Power Engineering Conference, 2008. UPEC 2008. 43rd International
Conference_Location :
Padova
Print_ISBN :
978-1-4244-3294-3
Electronic_ISBN :
978-88-89884-09-6
Type :
conf
DOI :
10.1109/UPEC.2008.4651670
Filename :
4651670
Link To Document :
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