DocumentCode :
3108035
Title :
Tackling intracell variability in TLC Flash through tensor product codes
Author :
Gabrys, Ryan ; Yaakobi, Eitan ; Grupp, Laura ; Swanson, Steven ; Dolecek, Lara
Author_Institution :
Univ. of California, Los Angeles, CA, USA
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
1000
Lastpage :
1004
Abstract :
Flash memory is a promising new storage technology. To fully utilize future multi-level cell Flash memories, it is necessary to develop error correction coding schemes attuned to the underlying physical characteristics of Flash. Based on a careful inspection of fine-grained, experimentally-collected error patterns of TLC (three bits per cell) Flash, we propose a mathematical model that captures the intracell variability, which is manifested by certain patterns of bit-errors. Error correction codes are constructed for this model based upon generalized tensor product codes. For fixed levels of redundancy, these codes are shown to exhibit substantially lower bit error rates than existing error correction schemes.
Keywords :
error correction codes; flash memories; tensors; TLC flash; bit-errors; error correction coding schemes; generalized tensor product codes; intracell variability; mathematical model; multi-level cell Flash memories; tensor product codes; Decoding; Error correction codes; Flash memory; Parity check codes; Product codes; Tensile stress; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
Conference_Location :
Cambridge, MA
ISSN :
2157-8095
Print_ISBN :
978-1-4673-2580-6
Electronic_ISBN :
2157-8095
Type :
conf
DOI :
10.1109/ISIT.2012.6282078
Filename :
6282078
Link To Document :
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