Title :
InAs QDs broadband LED using double-cap procedure and selective MOVPE growth
Author :
Saito, Y. ; Akaishi, M. ; Inoue, T. ; Suzuki, Y. ; Kawashima, F. ; Shimomura, K.
Author_Institution :
Dept. Electic. Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
More than 400 nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.
Keywords :
III-V semiconductors; MOCVD; indium compounds; light emitting diodes; semiconductor quantum dots; vapour phase epitaxial growth; LED; MOVPE; QD; array waveguide; double-cap procedure; strain controlled buffer; wavelength 400 nm; Buffer layers; Capacitive sensors; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Infrared spectra; Light emitting diodes; Strain control; Wideband;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5213764
