• DocumentCode
    3108199
  • Title

    InAs QDs broadband LED using double-cap procedure and selective MOVPE growth

  • Author

    Saito, Y. ; Akaishi, M. ; Inoue, T. ; Suzuki, Y. ; Kawashima, F. ; Shimomura, K.

  • Author_Institution
    Dept. Electic. Electron. Eng., Sophia Univ., Tokyo, Japan
  • fYear
    2009
  • fDate
    13-17 July 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    More than 400 nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.
  • Keywords
    III-V semiconductors; MOCVD; indium compounds; light emitting diodes; semiconductor quantum dots; vapour phase epitaxial growth; LED; MOVPE; QD; array waveguide; double-cap procedure; strain controlled buffer; wavelength 400 nm; Buffer layers; Capacitive sensors; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Infrared spectra; Light emitting diodes; Strain control; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-4102-0
  • Electronic_ISBN
    978-1-4244-4103-7
  • Type

    conf

  • DOI
    10.1109/OECC.2009.5213764
  • Filename
    5213764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3108199