DocumentCode

310829

Title

Effect Of MOS Device Scaling On Process Induced Gate Charging

Author

Alavi, Mohsen ; Jacobs, Steve ; Ahmed, Shahriar ; Chern, Chan-Hong ; Mcgregor, Paul

Author_Institution

Intel Corporation

fYear

1997

fDate

13-14 May 1997

Firstpage

7

Lastpage

10

Keywords

Breakdown voltage; Degradation; Diodes; Electric breakdown; MOS devices; Plasma measurements; Protection; Stress; Thickness measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1997., 2nd International Symposium on

Conference_Location

Monterey, California, USA

Print_ISBN

0-9651-5771-7

Type

conf

DOI

10.1109/PPID.1997.596667

Filename

596667