Analog and RF performance evaluation of a novel junctionless triple metal cylindrical surround gate (JLTM CSG) MOSFET

In this paper we propose a novel JL transistor with triple metal gate structure (JLTM). The DC, analog and RF performance parameters of the proposed JLTM have been compared with one standard JL transistor with single metal structure (JLDM). The DIBL and SS of JLTM reported are 0.0059 and 61.838 mV/dec respectively. Analog performance parameters g_m, g_m/I_d, g_m/g_d has also been reported to be improved significantly with the JLTM. The RF performance parameters f_T, f_MAX and gain band width product are also improved many folds.