Title :
Plasma Charging Damage On Ultra-thin Gate Oxides
Author :
Park, Donggun ; Hu, Chenming
Author_Institution :
University of California at Berkeley
Keywords :
MOS devices; MOSFETs; Paper technology; Plasma applications; Plasma devices; Plasma properties; Sputter etching; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
DOI :
10.1109/PPID.1997.596670
