Title :
Plasma Induced Charging Damage On 30/spl Aring/ Gate Oxide Antenna MOS Capacitor Structure During Polysilicon Gate Etch
Author :
Ma, Shawming ; Chi, Chiu ; Bayoumi, Amr ; Langley, Brian ; Cao, Min ; Marcoux, Paul ; Greene, Wayne ; Ray, Gary
Author_Institution :
ULSI Research Laboratory
Keywords :
Diodes; Etching; Leakage current; MOS capacitors; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Plasma sources; Ultra large scale integration;
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
DOI :
10.1109/PPID.1997.596673
