• DocumentCode
    310834
  • Title

    Leakage Current Due To Plasma Induced Damage In Thin Gate Oxide MOS Transistors

  • Author

    Sridharan, Arun ; Oh, Jeffrey ; Werking, James ; Brozek, Tomasz ; Viswanathan, Chand R.

  • Author_Institution
    University of Californi, Los Angeles
  • fYear
    1997
  • fDate
    13-14 May 1997
  • Firstpage
    29
  • Lastpage
    32
  • Keywords
    Antenna measurements; Current measurement; Etching; Leakage current; Low voltage; MOS devices; MOSFETs; Plasma devices; Plasma materials processing; Plasma measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1997., 2nd International Symposium on
  • Conference_Location
    Monterey, California, USA
  • Print_ISBN
    0-9651-5771-7
  • Type

    conf

  • DOI
    10.1109/PPID.1997.596675
  • Filename
    596675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310834