DocumentCode
3108414
Title
A PSPICE model of the DG-EST based on the ambipolar diffusion equation
Author
Palmer, Patrick R. ; Stark, Bernard H.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
1
fYear
1999
fDate
36373
Firstpage
358
Abstract
The switching behaviour of the IGBT is combined with the low on state voltage of the thyristor in the dual gate emitter switched thyristor (DG-EST). This paper describes an accurate PSPICE model for the DG-EST. PSPICE results are compared with full 2D modeling results and conclusions are drawn
Keywords
SPICE; power semiconductor switches; semiconductor device models; thyristors; 2D modelling; PSPICE model; computer simulation; dual gate emitter switched thyristor; on state voltage; switching behaviour; Anodes; Cathodes; Controllability; Equations; Insulated gate bipolar transistors; Low voltage; SPICE; Switches; Switching circuits; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1999. PESC 99. 30th Annual IEEE
Conference_Location
Charleston, SC
ISSN
0275-9306
Print_ISBN
0-7803-5421-4
Type
conf
DOI
10.1109/PESC.1999.789028
Filename
789028
Link To Document