Title :
A PSPICE model of the DG-EST based on the ambipolar diffusion equation
Author :
Palmer, Patrick R. ; Stark, Bernard H.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
The switching behaviour of the IGBT is combined with the low on state voltage of the thyristor in the dual gate emitter switched thyristor (DG-EST). This paper describes an accurate PSPICE model for the DG-EST. PSPICE results are compared with full 2D modeling results and conclusions are drawn
Keywords :
SPICE; power semiconductor switches; semiconductor device models; thyristors; 2D modelling; PSPICE model; computer simulation; dual gate emitter switched thyristor; on state voltage; switching behaviour; Anodes; Cathodes; Controllability; Equations; Insulated gate bipolar transistors; Low voltage; SPICE; Switches; Switching circuits; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1999. PESC 99. 30th Annual IEEE
Conference_Location :
Charleston, SC
Print_ISBN :
0-7803-5421-4
DOI :
10.1109/PESC.1999.789028
