DocumentCode :
310844
Title :
Silicon Damage Mechanism In Oxide Etch
Author :
Yang, Ming ; Nakata, Kenichi
Author_Institution :
Texas Instruments, Inc.
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
69
Lastpage :
72
Keywords :
Chemicals; Diodes; Fabrication; Instruments; Plasma applications; Plasma chemistry; Plasma devices; Silicon; Sputter etching; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596694
Filename :
596694
Link To Document :
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