DocumentCode :
310852
Title :
Behaviors Of Plasma-induced Pre-tunneling Leakage Current In MOS Capacitor
Author :
Fukumoto, Y. ; Nishizuka, T. ; Ohmoto, S. ; Inoue, T. ; Nozawa, T. ; Nakaue, A.
Author_Institution :
Kobe Steel, Ltd.
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
99
Lastpage :
101
Keywords :
Antenna measurements; Current measurement; Delay effects; Design for quality; Leakage current; MOS capacitors; Plasma devices; Plasma measurements; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596705
Filename :
596705
Link To Document :
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