Title :
Characterization of silicon detectors with thin dead-layers on the n-side
Author :
Avset, B.S. ; Chesi, E. ; Evensen, L. ; Jensen, G.U. ; Martinengo, P. ; Mo, S. ; Seguinot, J. ; Weilhammer, P. ; Westgaard, T.
Author_Institution :
SINTEF Electron. & Cybern., Oslo, Norway
Abstract :
Low energy electrons, alpha particles and X-rays has a short penetration depth in silicon. For detection of these types of radiation it is important that the detector has a shallow inactive region at the side which is irradiated. A series of shallow dead layer test detectors produced by n-side implantation of phosphorus, arsenic or antimony has been characterized. Leakage current levels in the range 2-5 nA/cm2 were achieved with dead layers in the range 0.1-0.2 μm. A silicon pixel detector which will be used in a hybrid photon detector has been produced with thin dead layer technology. The lower detection limit for electrons with this detector is 2.5 keV
Keywords :
X-ray detection; alpha-particle detection; electron detection; silicon radiation detectors; 2.5 keV; As; P; Sb; Si detectors; X-rays; alpha particles; antimony; arsenic; hybrid photon detector; leakage current levels; low energy electrons; lower detection limit; n-side; n-side implantation; penetration depth; phosphorus; shallow dead layer test detectors; shallow inactive region; silicon detectors; silicon pixel detector; thin dead-layers; Bonding; Contacts; Electrical resistance measurement; Electrons; Implants; Leak detection; Leakage current; Radiation detectors; Silicon; Testing;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672591
