Title :
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
Author :
Ren, F. ; Hong, M. ; Kuo, J.M. ; Hobson, W.S. ; Lothian, J.R. ; Tsai, H.S. ; Lin, J. ; Mannaerts, J.P. ; Kwo, J. ; Chu, S.N.G. ; Chen, Y.K. ; Cho, A.Y.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.
Keywords :
III-V semiconductors; MOSFET; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor technology; Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric; GaAs-Ga/sub 2/O/sub 3/Gd/sub 2/O/sub 3/; III-V compound semiconductor; In/sub 0.53/Ga/sub 0.47/As-Ga/sub 2/O/sub 3/Gd/sub 2/O/sub 3/; MOSFET technology; depletion-mode n-channel device; enhancement-mode n-channel device; enhancement-mode p-channel device; metal oxide semiconductor field effect transistor; Annealing; Dielectrics; Fabrication; Gallium arsenide; III-V semiconductor materials; Insulation; MOSFETs; Ohmic contacts; Oxidation; Silicon compounds;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628229
