DocumentCode :
310856
Title :
A Strategy To Detect Charge Damaging Process Steps Within A Multilayer Metallization Technology
Author :
Pölzl, Martin ; Stecher, Matthias
Author_Institution :
Siemens
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
109
Lastpage :
112
Keywords :
Annealing; MOS devices; Measurement techniques; Metallization; Nonhomogeneous media; Plasma applications; Plasma devices; Plasma measurements; Resists; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596710
Filename :
596710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310856
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