• DocumentCode
    310856
  • Title

    A Strategy To Detect Charge Damaging Process Steps Within A Multilayer Metallization Technology

  • Author

    Pölzl, Martin ; Stecher, Matthias

  • Author_Institution
    Siemens
  • fYear
    1997
  • fDate
    13-14 May 1997
  • Firstpage
    109
  • Lastpage
    112
  • Keywords
    Annealing; MOS devices; Measurement techniques; Metallization; Nonhomogeneous media; Plasma applications; Plasma devices; Plasma measurements; Resists; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1997., 2nd International Symposium on
  • Conference_Location
    Monterey, California, USA
  • Print_ISBN
    0-9651-5771-7
  • Type

    conf

  • DOI
    10.1109/PPID.1997.596710
  • Filename
    596710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310856