DocumentCode :
310857
Title :
MERIE Induced Flatband Shifts Of MNOS Devices
Author :
Bjorkman, C.H. ; Shan, H. ; Welch, M. ; Sambei, T. ; Hori, T. ; Okano, H. ; Namose, I. ; Ikegami, M.
Author_Institution :
Applied Materials Inc.
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
115
Lastpage :
118
Keywords :
Cathodes; Dielectric materials; Dielectric measurements; Etching; Hardware; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596711
Filename :
596711
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310857
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