DocumentCode :
310860
Title :
A Complete Approach To The In-line Monitoring Of Materials Defects Introduced In Dielectric And Si By Plasma Processing
Author :
Nauka, K. ; Theil, J. ; Lagowski, J. ; Jastrzebski, L. ; Sawtchouk, S.
Author_Institution :
Hewlett-Packard Company
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
127
Lastpage :
130
Keywords :
Corona; Dielectric materials; Monitoring; Plasma applications; Plasma devices; Plasma diagnostics; Plasma materials processing; Plasma measurements; Plasma properties; Surface discharges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596716
Filename :
596716
Link To Document :
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