Title :
Gallium Nitride RF-devices: An overview on the development activities in Europe
Author :
Quay, Rüdiger ; Mikulla, Michael
Author_Institution :
Fraunhofer Inst. Appl. Solid-State Phys. (FhG-IAF), Freiburg, Germany
Abstract :
Gallium Nitride is a key technology with high system impact for European industries for communication-, military-, and space-applications. This paper reviews the recent technical development activities of III-Nitride devices for RF-applications in Europe. After the completion of several significant research projects, the technical status is reviewed based on recent examples relevant to the state-of-the-art in Europe. Further, a European perspective for the industrialization and exploitation of this technology will be discussed.
Keywords :
III-V semiconductors; gallium compounds; radiofrequency integrated circuits; wide band gap semiconductors; Europe; communication; development activities; gallium nitride RF-devices; military; space applications; Aerospace industry; Defense industry; Europe; Gallium nitride; III-V semiconductor materials; Integrated circuit technology; Physics; Solid state circuits; Space technology; Substrates;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515865
