DocumentCode :
310869
Title :
Effect Of Gate Oxide Thickness On Charging Damage In PIII
Author :
En, William G. ; Bell, Scott ; Linder, Barry ; Cheung, Nathan W.
Author_Institution :
Advanced Micro Devices
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
161
Lastpage :
164
Keywords :
Analytical models; MOSFET circuits; Plasma accelerators; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma simulation; Plasma sources; SPICE; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596729
Filename :
596729
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310869
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