DocumentCode :
310877
Title :
Comparison Of Techniques For Gate Oxide Damage Measurements
Author :
Educato, James L. ; Gabriel, Calvin T.
Author_Institution :
VLSI Technology, Inc.
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
193
Lastpage :
196
Keywords :
Antenna measurements; Breakdown voltage; Charge measurement; Current measurement; Design for quality; Gate leakage; Plasma measurements; Stress measurement; Threshold voltage; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596741
Filename :
596741
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310877
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