Large signal characterization of GaN HEMT transistor by multi-harmonic source & load pull tuner system

Author

Shengjie Gao ; Chan-Wang Park

Author_Institution

Univ. of Quebec in Rimouski, Rimouski, QC, Canada

fYear

2012

fDate

29-30 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a GaN HEMT transistor is characterized at 3.5 GHz by passive multi-harmonic source & load pull tuner system in large signal. In order to analyze the effect on PAE and output power from the source and load impedance at fundamental, 2^nd and 3^rd harmonic frequencies, multi-harmonic source and load pull tuner are used. By using this source & load pull tuner system, Cree´s GaN HEMT CGH40010 transistor is characterized at 3.5 GHz with considering the source and load impedances at 2^nd and 3^rd harmonic frequencies. The characterization result shows that maximum PAE could reach 74.21% with 39.92 dBm output power.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; 2^nd harmonic frequency; 3^rd harmonic frequency; Cree´s HEMT CGH40010 transistor; GaN; PAE; efficiency 74.21 percent; frequency 3.5 GHz; large signal characterization; load impedance; load pull tuner system; passive multiharmonic frequency source; source impedance; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Power generation; Transistors; Tuners; Characterization; harmonic frequencies; power amplifier; source & load pull tuner;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Symposium (ARFTG), 2012 80th ARFTG

Conference_Location

San Diego, CA

Print_ISBN

978-1-4673-4817-1

Electronic_ISBN

978-1-4673-4820-1

Type

conf

DOI

10.1109/ARFTG.2012.6422432

Filename

6422432