Title :
Large signal characterization of GaN HEMT transistor by multi-harmonic source & load pull tuner system
Author :
Shengjie Gao ; Chan-Wang Park
Author_Institution :
Univ. of Quebec in Rimouski, Rimouski, QC, Canada
Abstract :
In this paper, a GaN HEMT transistor is characterized at 3.5 GHz by passive multi-harmonic source & load pull tuner system in large signal. In order to analyze the effect on PAE and output power from the source and load impedance at fundamental, 2nd and 3rd harmonic frequencies, multi-harmonic source and load pull tuner are used. By using this source & load pull tuner system, Cree´s GaN HEMT CGH40010 transistor is characterized at 3.5 GHz with considering the source and load impedances at 2nd and 3rd harmonic frequencies. The characterization result shows that maximum PAE could reach 74.21% with 39.92 dBm output power.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; 2nd harmonic frequency; 3rd harmonic frequency; Cree´s HEMT CGH40010 transistor; GaN; PAE; efficiency 74.21 percent; frequency 3.5 GHz; large signal characterization; load impedance; load pull tuner system; passive multiharmonic frequency source; source impedance; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Power generation; Transistors; Tuners; Characterization; harmonic frequencies; power amplifier; source & load pull tuner;
Conference_Titel :
Microwave Measurement Symposium (ARFTG), 2012 80th ARFTG
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-4817-1
Electronic_ISBN :
978-1-4673-4820-1
DOI :
10.1109/ARFTG.2012.6422432
