Title :
A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition
Author :
Kunihisha, T. ; Yokoyama, T. ; Nishijima, M. ; Yamamoto, S. ; Nishitsuji, M. ; Nishii, K. ; Nakayama, M. ; Ishikawa, O.
Author_Institution :
Electron. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
A normally-off MODFET power MMIC has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P/sub out/) of 22.0 dBm has been achieved under 3.0 V single-supply condition. The operating current is only 127 mA and the adjacent channel leakage power (P/sub adj/) is -58.2 dBc. Three FETs with their matching circuits are integrated on a very small die (1.1 mm/sup 2/) of the MMIC.
Keywords :
HEMT integrated circuits; field effect MMIC; land mobile radio; power integrated circuits; telephone sets; 1.9 GHz; 127 mA; 3.0 V; 41.7 percent; Japanese Personal Handy-phone System; PHS; adjacent channel leakage power; normally-off MODFET power MMIC; operating current; output power; power added efficiency; single-supply condition; Circuits; FETs; HEMTs; Impedance; MMICs; MODFETs; Power generation; Switches; Transconductance; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628232
