Title :
Degradation Of Silicon Dioxide Film Under High Electric Field Stress
Author_Institution :
University of Tsukuba
Keywords :
Annealing; Degradation; Electric breakdown; Electrodes; Leakage current; MOS capacitors; Plasma temperature; Semiconductor films; Silicon compounds; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
DOI :
10.1109/PPID.1997.596760
