A low distortion and high efficiency HBT MMIC power amplifier with a novel linearization technique for /spl pi//4 DPSK modulation

Author

Yoshimasu, T. ; Akagi, M. ; Tanba, N. ; Hara, S.

Author_Institution

VLSI Dev. Labs., Sharp Corp., Nara, Japan

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

45

Lastpage

48

Abstract

A novel linearization technique which improves the phase distortion and gain compression of a power amplifier is proposed in this paper. Moreover, a low distortion and high efficiency AlGaAs/GaAs HBT MMIC power amplifier for the 1.9 GHz PHS system has been demonstrated using the novel linearization technique. The HBT MMIC power amplifier exhibits an output power of 21 dBm and a power added efficiency as high as 37% at an operation voltage of 2.7 V with linearity well within the PHS standard.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; bipolar MMIC; differential phase shift keying; electric distortion; gallium arsenide; heterojunction bipolar transistors; land mobile radio; linearisation techniques; microwave power amplifiers; quadrature phase shift keying; /spl pi//4 DPSK modulation; 1.9 GHz; 2.7 V; 37 percent; AlGaAs-GaAs; AlGaAs/GaAs HBT MMIC power amplifier; PHS system; gain compression; linearization; output power; phase distortion; power added efficiency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearization techniques; MMICs; Operational amplifiers; Phase distortion; Power amplifiers; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628234

Filename

628234