Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems

Author

Nagaoka, M. ; Wakimoto, H. ; Seshita, T. ; Kawakyu, K. ; Kitaura, Y. ; Kameyama, A. ; Uchitomi, N.

Author_Institution

Toshiba R&D Center, Kawasaki, Japan

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

49

Lastpage

52

Abstract

A GaAs power amplifier with a low-distortion, 10-dB gain attenuator has been developed for 1.9-GHz personal handy phone system (PHS). Single low 2.4-V supply operation was achieved by using power MESFETs with p-pocket layers. Furthermore, on account of an attenuator with cascaded shunt FET structure, very low 600-kHz adjacent channel leakage power (ACP) with sufficient, constant output power was attained regardless of any controlled gain. An output power of 21.1 dBm, a low dissipated current of 157 mA and a high power-added efficiency of 37.2% were obtained with ACP of -55 dBc.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF power amplifiers; attenuators; gallium arsenide; land mobile radio; power amplifiers; 1.9 GHz; 10 dB; 157 mA; 2.4 V; 37.2 percent; ACP; GaAs; GaAs power MESFET amplifier; adjacent channel leakage power; cascaded shunt FET; current dissipation; low-distortion gain-variable attenuator; output power; p-pocket layer; personal handy phone system; power-added efficiency; single low voltage supply operation; Attenuators; FETs; Gallium arsenide; Low voltage; MESFETs; Operational amplifiers; Power amplifiers; Power generation; Power supplies; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628235

Filename

628235