Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

A monolithic three stage HPA has been developed for wide band applications. This MMIC is fabricated on UMS 0.25 μm GaN technology based on SiC substrate. At 18 GHz, the MMIC achieved in CW mode 10 W of output power with 20 dB linear gain and 20% power added efficiency. The HPA provided 6 to 10 W output power over 6 to 18 GHz with minimum small signal gain of 18 dB. These obtained performances are very promising and very close to the simulations; this will allow a very short term further improvement. This demonstration is the first MMIC on the UMS 0.25 μm GaN technology.