Title :
Radiation hardened complementary GaAs(CGaAs/sup TM/)
Author :
LaMacchla, M. ; Abrokwah, J.K. ; Bernhardt, Birgitta ; Crawforth, B. ; Mathes, B. ; McGuire, T. ; Weatherford, Todd
Author_Institution :
Motorola Inc., Scottsdale, AZ, USA
Abstract :
The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; leakage currents; radiation hardening (electronics); CGaAs wafer; GaAs; SEU sensitivity; gate leakage; low temperature GaAs layer; output conductance; radiation hardening; self-aligned complementary GaAs P-channel HIGFET; short channel characteristics; subthreshold leakage current; transistor; Aluminum; Doping; FETs; Gallium arsenide; Gate leakage; Radiation hardening; Senior members; Silicon; Space technology; Threshold voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628237
