Title :
Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD
Author :
Hattori, R. ; Nakamura, G. ; Nomura, S. ; Ichise, T. ; Masuda, A. ; Matsumura, H.
Author_Institution :
Opt. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We improved the catalytic (cat-) CVD technique for damage free passivation on compound semiconductors. The cat-CVD SiN passivation successfully reduces the noise figure of X-band pHEMTs because Rs and Cgs are reduced due to low deposition damage.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; high electron mobility transistors; microwave field effect transistors; passivation; semiconductor device noise; GaAs; III-V semiconductors; SiN; X-band; catalytic CVD; damage free passivation; deposition damage; noise figure; pHEMTs; plasmaless passivation; Etching; Noise reduction; Optical films; PHEMTs; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Semiconductor films; Silicon compounds;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628242
