• DocumentCode
    3109490
  • Title

    Noise reduction of pHEMTs with plasmaless SiN passivation by catalytic CVD

  • Author

    Hattori, R. ; Nakamura, G. ; Nomura, S. ; Ichise, T. ; Masuda, A. ; Matsumura, H.

  • Author_Institution
    Opt. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
  • fYear
    1997
  • fDate
    12-15 Oct. 1997
  • Firstpage
    78
  • Lastpage
    80
  • Abstract
    We improved the catalytic (cat-) CVD technique for damage free passivation on compound semiconductors. The cat-CVD SiN passivation successfully reduces the noise figure of X-band pHEMTs because Rs and Cgs are reduced due to low deposition damage.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; high electron mobility transistors; microwave field effect transistors; passivation; semiconductor device noise; GaAs; III-V semiconductors; SiN; X-band; catalytic CVD; damage free passivation; deposition damage; noise figure; pHEMTs; plasmaless passivation; Etching; Noise reduction; Optical films; PHEMTs; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Semiconductor films; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-4083-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1997.628242
  • Filename
    628242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3109490