Title :
A 1 GS/s, 11-b track-and-hold amplifier with <0.1 dB gain loss
Author :
Yu, R. ; Sheng, N.H. ; Cheng, K. ; Gutierrez, G. ; Wang, K.C. ; Chang, M.F.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
A track-and-hold amplifier for use in high-speed ADCs was implemented in a production AlGaAs/GaAs HBT process. Under Nyquist conditions, the fabricated ICs showed 11 effective number of bits (ENOBs) at 1 GS/s and >12 ENOBs at 800 MS/s. The large signal gain loss of these ICs was measured to be below 0.1 dB.
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; analogue-digital conversion; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; sample and hold circuits; 0.1 dB; 11 bit; AlGaAs-GaAs; AlGaAs/GaAs HBT IC; Nyquist condition; effective number of bits; high-speed ADC; signal gain loss; track-and-hold amplifier; Analog-digital conversion; Bridge circuits; Clocks; Diodes; Distortion measurement; Gain measurement; Heterojunction bipolar transistors; Loss measurement; Production; Sampling methods;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628244
