DocumentCode
3109521
Title
A 1 GS/s, 11-b track-and-hold amplifier with <0.1 dB gain loss
Author
Yu, R. ; Sheng, N.H. ; Cheng, K. ; Gutierrez, G. ; Wang, K.C. ; Chang, M.F.
Author_Institution
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fYear
1997
fDate
12-15 Oct. 1997
Firstpage
87
Lastpage
90
Abstract
A track-and-hold amplifier for use in high-speed ADCs was implemented in a production AlGaAs/GaAs HBT process. Under Nyquist conditions, the fabricated ICs showed 11 effective number of bits (ENOBs) at 1 GS/s and >12 ENOBs at 800 MS/s. The large signal gain loss of these ICs was measured to be below 0.1 dB.
Keywords
III-V semiconductors; aluminium compounds; amplifiers; analogue-digital conversion; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; sample and hold circuits; 0.1 dB; 11 bit; AlGaAs-GaAs; AlGaAs/GaAs HBT IC; Nyquist condition; effective number of bits; high-speed ADC; signal gain loss; track-and-hold amplifier; Analog-digital conversion; Bridge circuits; Clocks; Diodes; Distortion measurement; Gain measurement; Heterojunction bipolar transistors; Loss measurement; Production; Sampling methods;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location
Anaheim, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-4083-3
Type
conf
DOI
10.1109/GAAS.1997.628244
Filename
628244
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