Title :
Bandpass delta-sigma modulator with 800 MHz center frequency
Author :
Jayaraman, A. ; Asbeck, P. ; Nary, K. ; Beccue, S. ; Keh-Chung Wang
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; sigma-delta modulation; 1 bit; 100 kHz; 25 MHz; 3.2 GHz; 800 MHz; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; bandwidth; cellular band; clock frequency; fourth-order bandpass delta-sigma modulator; signal-to-noise ratio; Bandwidth; Circuits; Clocks; Delta modulation; Digital modulation; Feedback; Frequency modulation; Heterojunction bipolar transistors; Signal to noise ratio; Transconductors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628246