Title :
GaAs ICs for 10 Gb/s ATM switching
Author :
Nunez, A. ; Sarmiento, R. ; Esper-Chain, R. ; Jakobsen, J. ; Montiel-Nelson, J.A. ; Lopez, J. ; Armas, V. ; Tobajas, F.
Author_Institution :
CMA, Univ. of Las Palmas de Gran Canaria, Spain
Abstract :
This paper reports on work done by project GARDEN under EU ESPRIT Research Programme in the past three years for developing ATM line units and ATM switch fabric operating at 2.5 Gb/s, and ongoing work for system upgrading to 10 Gb/s operation. A circuit of each type of unit is presented. This project has required the detailed specification of the system architecture, partitioning, interconnection, and technology mapping of the ATM functions into different chips, the development of full custom layout methodology and tools for MESFET HGaAs III, IV and HEMT technologies, and the actual design, fabrication and test of a set of IC´s performing physical layer, ATM layer, buffering and switching functions.
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; asynchronous transfer mode; electronic switching systems; gallium arsenide; 10 Gbit/s; ATM switching; EU ESPRIT Research Programme; GARDEN project; GaAs; GaAs IC; HEMT; MESFET; buffering function; full custom layout; interconnection; partitioning; system architecture; technology mapping; Asynchronous transfer mode; Fabrication; Fabrics; Gallium arsenide; HEMTs; Integrated circuit interconnections; Integrated circuit layout; MESFET integrated circuits; Switches; System testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628247
