A high speed and high precision 64/spl times/33 crosspoint switch IC

Author

Savara, R.

Author_Institution

TriQuint Semicond. Inc., Hillsboro, OR, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

105

Lastpage

108

Abstract

A monolithic 2.125GB/s per port 64/spl times/33 crosspoint switch IC has been designed, fabricated, and tested. A 0.6 um enhancement/depletion, recessed gate GaAs process was chosen for this product, which offers high speed devices with low power dissipation. The design used SCFL (Source Coupled FET Logic) standard cells for the switch matrix. All the data path signals use standard differential PECL input and output levels to maintain precision pulse width characteristics. The control signals, are in TTL levels. The high speed data inputs are DC biased allowing AC coupled operation. The switch offers non-blocking programming, and can be configured prior to enabling the outputs for synchronous reprogramming and operation from a single +5V supply.

Keywords

III-V semiconductors; MESFET integrated circuits; electronic switching systems; gallium arsenide; 0.6 micron; 2.125 GB/s; 5 V; GaAs; SCFL standard cell; TTL level; differential PECL; high speed high precision crosspoint switch IC; monolithic enhancement/depletion recessed gate GaAs process; nonblocking programming; power dissipation; pulse width; synchronous reprogramming; FETs; Gallium arsenide; High speed integrated circuits; Integrated circuit testing; Logic design; Logic devices; Logic programming; Monolithic integrated circuits; Power dissipation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628248

Filename

628248