DocumentCode
3109648
Title
Resonant tunneling circuit technology: has it arrived?
Author
Seabaugh, A. ; Brar, B. ; Broekaert, T. ; Frazier, G. ; Morris, F. ; van der Wagt, P. ; Beam, E.
Author_Institution
Raytheon TI Syst., Dallas, TX, USA
fYear
1997
fDate
12-15 Oct. 1997
Firstpage
119
Lastpage
122
Abstract
A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today´s fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.
Keywords
indium compounds; 25 to 100 GHz; InP; fabrication; heterojunction field-effect transistor; high-speed digital circuit; mixed-signal circuit; resonant tunneling circuit technology; resonant tunneling diode; semiconductor device; three-dimensional LSI process; ultralow power SRAM circuit; FETs; Fabrication; Heterojunctions; Indium phosphide; Large scale integration; RLC circuits; Random access memory; Resonant tunneling devices; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location
Anaheim, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-4083-3
Type
conf
DOI
10.1109/GAAS.1997.628251
Filename
628251
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