Title :
Production and commercial insertion of InP HBT integrated circuits
Author :
Streit, D.C. ; Gutierrez-Aitken, A. ; Cowles, J.C. ; Li-Wu Yang ; Kobayashi, K.W. ; Tran, L.T. ; Block, T.R. ; Oki, A.K.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
We have developed an InP-based HBT fabrication line to produce HBT integrated circuits in high volume for government and commercial applications. We present here production results and performance characteristics for InP HBT MMICs specifically designed for consumer products.
Keywords :
III-V semiconductors; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; production; HBT integrated circuits; InP; InP HBT MMICs; InP-based HBT fabrication line; commercial insertion; consumer products; high volume production; performance characteristics; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Production; Substrates; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628255
