Title :
Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application
Author :
Masuda, H. ; Ouchi, K. ; Terano, A. ; Suzuki, H. ; Watanabe, K. ; Oka, T. ; Matsubara, H. ; Tanoue, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Several techniques that enable high-yield fabrication of high-performance high-thermal-stability InP/InGaAs heterojunction bipolar transistors (HBTs) for use in 40-Gb/s ICs were developed. The T-shaped emitter electrode structure provides a simple fabrication process. A highly-C-doped base and a new Pt/Ti/Mo/Ti/Pt/Au metal system result in a thin base and low base resistance. An InP subcollector suppresses thermal runaway at high collector current. Using these techniques, an extremely high cutoff frequency f/sub T/ of 235 GHz was achieved for an HBT, along with a static 1/2 frequency divider operating up to 44 GHz.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; optical communication equipment; thermal stability; 235 GHz; 40 Gbit/s; 44 GHz; InP subcollector; InP-InGaAs:C; InP/InGaAs HBTs; Pt-Ti-Mo-Ti-Pt-Au; Pt/Ti/Mo/Ti/Pt/Au metal system; T-shaped emitter electrode structure; device technology; fabrication process; heterojunction bipolar transistors; high thermal stability; high-yield fabrication; highly-C-doped base; optical transmission application; static 1/2 frequency divider; thermal runaway suppression; Cutoff frequency; Electrodes; Frequency conversion; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical devices; Stimulated emission;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628256
