Title :
50-GHz bandwidth base-band amplifiers using GaAs-based HBTs
Author :
Suzuki, Y. ; Shimawaki, H. ; Amamiya, Y. ; Nagano, N. ; Niwa, T. ; Yano, H. ; Honjo, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Base-band amplifiers have been demonstrated using AlGaAs/InGaAs HBTs with regrown base contacts. The transimpedance amplifier achieved a bandwidth of 49.3 GHz and a transimpedance gain of 43.7 dB /spl Omega/. The Darlington feedback amplifier achieved a bandwidth of 54.7 GHz and a gain of 8.2 dB. These are the widest bandwidths yet reported for lumped-circuit-design amplifiers. These performances suggest the great potential of these amplifiers for use in future optical communication and millimeter-wave applications.
Keywords :
III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 50 GHz; 8.2 dB; AlGaAs-InGaAs; AlGaAs/InGaAs HBT; Darlington feedback amplifier; bandwidth; base-band amplifier; lumped-circuit-design amplifier; millimeter-wave application; optical communication; regrown base contact; transimpedance amplifier; transimpedance gain; Bandwidth; Feedback amplifiers; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Millimeter wave communication; Millimeter wave technology; Optical amplifiers; Optical fiber communication;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628257
