50-GHz bandwidth base-band amplifiers using GaAs-based HBTs

Author

Suzuki, Y. ; Shimawaki, H. ; Amamiya, Y. ; Nagano, N. ; Niwa, T. ; Yano, H. ; Honjo, K.

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

143

Lastpage

146

Abstract

Base-band amplifiers have been demonstrated using AlGaAs/InGaAs HBTs with regrown base contacts. The transimpedance amplifier achieved a bandwidth of 49.3 GHz and a transimpedance gain of 43.7 dB /spl Omega/. The Darlington feedback amplifier achieved a bandwidth of 54.7 GHz and a gain of 8.2 dB. These are the widest bandwidths yet reported for lumped-circuit-design amplifiers. These performances suggest the great potential of these amplifiers for use in future optical communication and millimeter-wave applications.

Keywords

III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 50 GHz; 8.2 dB; AlGaAs-InGaAs; AlGaAs/InGaAs HBT; Darlington feedback amplifier; bandwidth; base-band amplifier; lumped-circuit-design amplifier; millimeter-wave application; optical communication; regrown base contact; transimpedance amplifier; transimpedance gain; Bandwidth; Feedback amplifiers; Frequency; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Millimeter wave communication; Millimeter wave technology; Optical amplifiers; Optical fiber communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628257

Filename

628257