Title :
AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise
Author :
Bayraktaroglu, B. ; Dix, G. ; Mohammadi, Soheil ; Pavlidis, Dimitris
Author_Institution :
Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; life testing; semiconductor device noise; semiconductor device reliability; 1E2 to 1E9 hr; AlGaAs-GaAs; HBT reliability; LF baseband noise characteristics; current gain degradation; lifetime; long-term reliability; low frequency baseband noise; material dependence; starting epitaxial material; Baseband; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Materials reliability; Noise measurement; Stress; Temperature; Testing; Thermal degradation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628259
