Title :
Multi-octave GaAs MMIC receivers
Author :
Robertson, I. ; Aghvami, A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London Univ., UK
fDate :
30 Sep-3 Oct 1990
Abstract :
MMIC technology has enabled very complex microwave and millimeter-wave systems to be conceived, using a modular approach to the various functions. The application of this modular approach to the design of advanced multioctave microwave receivers is described. The individual building blocks are described, and typical performances are given. The integration of complete compact receiver modules using these advanced concepts is discussed
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; radio receivers; GaAs; HEMT technology; compact receiver modules; design; integration; modular approach; multioctave MMIC receivers; performances; Circuits; Couplers; Diodes; Educational institutions; FETs; Gallium arsenide; Impedance matching; MMICs; Radio frequency; Transmission lines;
Conference_Titel :
Military Communications Conference, 1990. MILCOM '90, Conference Record, A New Era. 1990 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/MILCOM.1990.117463
