Title :
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Author :
Otsuji, T. ; Murata, K. ; Enoki, T. ; Umeda, Y.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
We report on an 80-Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double layer interconnection process with a low permittivity insulator. The record operating data rate was measured on a 3-inch wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect digital integrated circuits; gallium arsenide; indium compounds; integrated circuit interconnections; multiplexing; multiplexing equipment; 80 Gbit/s; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMT; data rate; eye pattern; high-speed double layer interconnection; low permittivity insulator; selector-type multiplexer IC; Bandwidth; HEMTs; High speed integrated circuits; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; MODFETs; Multiplexing; Permittivity measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628265
