Title :
A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter
Author :
Broekaert, T.P.E. ; Brar, B. ; van der Wagt, J.P.A. ; Seabaugh, A.C. ; Moise, T.S. ; Morris, F.J. ; Beam, E.A., III. ; Frazier, G.A.
Author_Institution :
Corp. Res. Labs., Texas Instrum. Incorp., Dallas, TX, USA
Abstract :
The combination of resonant tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate the first monolithic flash RTD/HFET analog-to-digital converter (ADC). The first pass ADC achieved 2.7 effective bits at 2 GSps. The one bit quantizer achieved a single tone spurious free dynamic range (SFDR) of greater than 40 dB at 2 GSps for a 220 MHz single tone input with dithering.
Keywords :
JFET integrated circuits; analogue-digital conversion; resonant tunnelling diodes; 220 MHz; 4 bit; dithering; heterostructure field-effect transistor; monolithic flash RTD/HFET analog-to-digital converter; quantizer; resonant tunneling diode; single tone spurious free dynamic range; Analog-digital conversion; Capacitors; Clocks; Feedback circuits; HEMTs; Integrated circuit interconnections; MODFETs; Propagation delay; Resonant tunneling devices; Signal design;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628266
