Title :
Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
Author :
Olivier, A. ; Wichmann, N. ; Mo, J.J. ; Noudeviwa, A. ; Roelens, Y. ; Desplanque, L. ; Wallart, X. ; Danneville, F. ; Dambrine, G. ; Bollaert, S. ; Martin, F. ; Desplats, O. ; Saint-Martin, J. ; Shi, M. ; Wang, Y. ; Chauvat, M.P. ; Ruterana, P. ; Maher, H
Author_Institution :
ANODE & EPIPHY groups, IEMN, Villeneuve-d´´Ascq, France
fDate :
May 31 2010-June 4 2010
Abstract :
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.
Keywords :
MOSFET; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; Al2O3; In0.53Ga0.47As; atomic layer deposition; ion implantation processes; n-channel inversion-type self-aligned MOSFET; size 200 nm; size 8 nm; Aluminum oxide; Annealing; Fabrication; Gold; Indium gallium arsenide; Ion implantation; Lithography; MOSFET circuits; Sputter etching; Wet etching; ALD; Al2O3; III-V MOSFET; In0.53Ga0.47As; inversion; self-aligned;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515926
