Title :
InP/InGaAs HBT ICs for 40 Gbit/s optical transmission systems
Author :
Suzuki, H. ; Watanabe, K. ; Ishikawa, K. ; Masuda, H. ; Ouchi, K. ; Tanoue, T. ; Takeyari, R.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
An IC chip set for 40 Gbit/s TDM optical transmission systems was designed and fabricated using an InP/InGaAs HBT technology. For digital ICs, a modulator driver, a D-type flip flop at 20 Gbit/s, and a 2:1 selector at 40 Gbit/s were fabricated. Also, three analog ICs were developed: the five-section cascode distributed amplifier which obtained a gain of 9.5 dB in the frequency range of 1-50 GHz, the 41.9 dB/spl Omega/ transimpedance amplifier which achieved more than 40 GHz bandwidth assuming 50 fF input capacitance for the photodetector, the two-stage differential amplifier which obtained a 7.5 dB gain with a bandwidth of 40 GHz.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical communication equipment; time division multiplexing; 2:1 selector; 40 Gbit/s; D-type flip flop; InP-InGaAs; InP/InGaAs HBT IC; TDM optical transmission system; analog IC; cascode distributed amplifier; differential amplifier; digital IC; modulator driver; transimpedance amplifier; Bandwidth; Differential amplifiers; Distributed amplifiers; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical modulation; Photonic integrated circuits; Time division multiplexing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628272
