Title :
A InP DHBT technology for high bit-rate optical communications circuits
Author :
Godin, J. ; Andre, P. ; Benchimol, J.L. ; Desrousseaux, P. ; Duchenois, A.M. ; Konczykowska, A. ; Launay, P. ; Meghelli, M. ; Riet, M.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
High bit-rate optical communication links require high performance circuits. This paper presents a InP Double Heterojunction HBT technology, and circuits fabricated with it: 40 Gbit/s MUX and DMUX, a 20 Gbit/s driver, a 30 Gbit/s selector-driver, a decision-decoding circuit for multilevel transmissions.
Keywords :
III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; optical communication equipment; 20 Gbit/s; 30 Gbit/s; 40 Gbit/s; DMUX; InP; InP double heterojunction HBT technology; MUX; decision-decoding circuit; driver; multilevel transmission; optical communications circuit; selector-driver; Circuit synthesis; Clocks; DH-HEMTs; Driver circuits; Erbium-doped fiber amplifier; Heterojunctions; High speed optical techniques; Indium phosphide; Optical fiber communication; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628273
