Title :
Effect of gravity on the growth of ternary alloy semiconductor bulk crystals
Author :
Hayakawa, Yasuhiro
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Shizuoka, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
The paper describes microgravity experiment using Chinese recovery satellite and the in-situ measurement of composition profile in the solution by X-ray penetration method to make clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals.
Keywords :
III-V semiconductors; crystal growth from melt; gallium compounds; indium compounds; semiconductor growth; zero gravity experiments; Chinese recovery satellite; InGaSb; X-ray penetration method; composition profile; crystal growth; gravity effect; in-situ measurement; microgravity experiment; ternary alloy semiconductor bulk crystals; Crystals; Earth; Electronic mail; Gravity; Poles and towers; Satellites; Shape; Space shuttles; Temperature; Transportation;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515934
