Title :
Is SiGe the future of GaAs for RF applications?
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today´s high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.
Keywords :
Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; GaAs; GaAs FET technology; GaAs HBT technology; IBM; RF integrated circuit; RFIC; SiGe; SiGe HBT technology; UHF IC; heterojunction bipolar transistor; high volume HF wireless communications; radiofrequency applications; FETs; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Manufacturing; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628275
