Is SiGe the future of GaAs for RF applications?

Author

Moniz, J.M.

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

229

Lastpage

231

Abstract

With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today´s high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.

Keywords

Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; GaAs; GaAs FET technology; GaAs HBT technology; IBM; RF integrated circuit; RFIC; SiGe; SiGe HBT technology; UHF IC; heterojunction bipolar transistor; high volume HF wireless communications; radiofrequency applications; FETs; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Manufacturing; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628275

Filename

628275