Title :
A high performance GaAs MMIC upconverter with an automatic gain control amplifier
Author :
Huainan Ma ; Sher Jiun Fang ; Fujiang Lin ; Khen-Sang Tan ; Shibata, J. ; Atsushi Tamura ; Hiroshi Nakamura
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
A newly developed GaAs MMIC upconverter with an automatic gain control (AGC) amplifier is presented. The circuit is to be used in a 1.9 GHz RF transceiver for the Japanese PHS applications. The features of the upconverter are: (1) on-chip 50 /spl Omega/ impedance matching for all AC input and output signals; (2) a double balanced Gilbert cell and a 2-stage AGC amplifier with matching circuits that provide 23 dB conversion gain, -39 dBc LO suppression, -23 dBc image suppression and 30 dB gain control; (3) Adjacent Channel Power (ACP) of -70 dBc; and (4) a die size of only 2.87 mm/sup 2/ (2.52 mm/spl times/1.14 mm).
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; UHF amplifiers; UHF frequency convertors; UHF integrated circuits; UHF mixers; automatic gain control; cellular radio; cordless telephone systems; digital radio; field effect MMIC; gallium arsenide; impedance matching; transceivers; 1.9 GHz; 23 dB; AGC amplifier; GaAs; GaAs MESFET process; GaAs MMIC upconverter; Japanese PHS applications; Personal Handyphone System; UHF transceiver; automatic gain control; double balanced Gilbert cell; matching circuits; onchip impedance matching; Circuits; Gain control; Gallium arsenide; Impedance matching; MMICs; Performance gain; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transceivers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628276
