Bidirectional analog 8/spl times/8 switch matrix with large input signal and over 1 GHz bandwidth

Author

Sokolowska, E. ; Fortin, G. ; Belabbes, N. ; Gagnon, M. ; Roy, C. ; Kaminska, B.

Author_Institution

hfOPTEX, Montreal, Que., Canada

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

236

Lastpage

239

Abstract

A yield-performance optimized 8/spl times/8 GaAs MESFET analog switch matrix aimed at handling simultaneously electrical signals of mixed protocols was designed for local-area network (LAN) applications. The unique features of this circuit are large matrix dimensions combined with small insertion loss, high channel isolation, constant R/sub ON/, low interchannel crosstalk, large maximum input signal, and over 1 GHz bandwidth. The integration of a control logic results in the same functionality as CMOS matrices, while the frequency performance is that of a GaAs circuit. This paper presents the design details and tradeoffs and compares simulated and measured results.

Keywords

III-V semiconductors; MESFET integrated circuits; analogue processing circuits; crosstalk; data communication equipment; electronic switching systems; field effect transistor switches; gallium arsenide; local area networks; mixed analogue-digital integrated circuits; switching circuits; 1 GHz; ASIC; GaAs; GaAs MESFET; LAN applications; bidirectional analog switch matrix; channel isolation; control logic; insertion loss; interchannel crosstalk; local-area network; mixed protocols; wideband operation; CMOS logic circuits; Crosstalk; Design optimization; Gallium arsenide; Insertion loss; Local area networks; MESFETs; Protocols; Signal design; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628277

Filename

628277