Title :
A 5.5 GHz fractional frequency-synthesizer IC
Author :
Diorio, C. ; Humes, T. ; Notthoff, H. ; Chao, G. ; Lai, A. ; Hyde, J. ; Kintis, M. ; Oki, A.
Author_Institution :
Dept. of Comput. Sci. & Eng., Washington Univ., Seattle, WA, USA
Abstract :
We report a GaAs-AlGaAs fractional frequency-synthesizer IC with a 5.5 GHz feedback divider, 2 GHz reference divider, 500 MHz phase-frequency detector, 1 ns charge-pump pulses, gain-normalized output current, and 18 pA/sub rms///spl radic/Hz in-band phase noise. The feedback divider allows continuously selectable divide ratios from 12 to 16383, and supports dual-modulus pulse-swallowing fractional synthesis with single-bit control. The reference divider allows continuously selectable divide ratios from 1 to 4095; an optional divide-by-four/five input prescaler extends the divide ratios to 20475. The chip consumes 1 W from +5 V and -5.2 V supplies.
Keywords :
III-V semiconductors; aluminium compounds; bipolar MMIC; circuit feedback; frequency synthesizers; gallium arsenide; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; -5.2 V; 1 W; 5 V; 5.5 GHz; GaAs-AlGaAs; GaAs-AlGaAs HBT process; continuously selectable divide ratios; dual-modulus pulse-swallowing fractional synthesis; feedback divider; fractional frequency-synthesizer IC; phase-frequency detector; reference divider; single-bit control; Charge pumps; Energy consumption; Frequency conversion; Frequency locked loops; Frequency synthesizers; Integrated circuit noise; Integrated circuit synthesis; Phase locked loops; Phase noise; Tuning;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628280
